Custom MMIC

300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294

Visit us online at www.custommmic.com

Assembly Guidelines

Assembly Diagram

ver 1.3 0716

Applications Information

The backside of the CMD233 is RF ground. Die attach may be accomplished with either electrically and

thermally conductive epoxy or eutectic attach. Standard assembly procedures should be followed for

high frequency devices. The top surface of the semiconductor should be made planar to the adjacent RF

transmission lines, and the RF decoupling capacitors placed in close proximity to the DC connections on

chip.

RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Use

of a 0.8 mil thermosonic wedge bonding is highly recommended as the loop height will be minimized.

The RF input and output require a single bond wire as shown.

The semiconductor is 100 um thick and should be handled by the sides of the die or with a custom collet.

Do not make contact directly with the die surface as this will damage the monolithic circuitry. Handle

with care.

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions

should be observed during handling, assembly and test.

CMD233

CMD233

CMD233

2-20 GHz Distributed Low Noise Amplifier

100 pF CHIP CAP

0.01 uF CHIP CAP

to Vdd

RF out

RF in

(example: Presidio part

LSA1515B101M2H5R-L)

(example: Presidio part

MVB4080X104ZGK5R3L)