Custom MMIC

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Applications Information

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions

should be observed during handling, assembly and test.

CMD262

26-28 GHz GaN Power Amplifier

Assembly Guidelines

Assembly Diagram

The backside of the CMD262 is RF ground. Die attach should be accomplished with electrically and

thermally conductive epoxy or eutectic attach. Standard assembly procedures should be followed for

high frequency devices. The top surface of the semiconductor should be made planar to the adjacent RF

transmission lines, and the RF decoupling capacitors placed in close proximity to the DC connections on

chip.

RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Use

of a 0.8 mil thermosonic wedge bonding is highly recommended as the loop height will be minimized.

The RF input and output require a double bond wire as shown.

The semiconductor is 100 um thick and should be handled by the sides of the die or with a custom collet.

Do not make contact directly with the die surface as this will damage the monolithic circuitry. Handle

with care.

ver 2.0 0619

to Vgg

100,000 pF CHIP CAP

100 pF CHIP CAP

to Vdd

100 pF CHIP CAP

100,000 pF CHIP CAP

(example: Presidio part

MVB4080X104ZGK5R3L)

(example: Presidio part

LSA1515B101M2H5R-L)

RF out

RF in