PMGD130UN

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© NXP B.V. 2012. All rights reserved.

Product data sheet

Rev. 1 — 1 June 2012

3 of 15

NXP Semiconductors

PMGD130UN

20 V, dual N-channel Trench MOSFET

5.

Limiting values

[1]

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

drain-source voltage

-

20

V

gate-source voltage

-8

8

V

drain current

[1]

-1.3

A

[1]

-1.2

A

[1]

-0.7

A

peak drain current

-

4.8

A

total power dissipation

[2]

-

260

mW

[1]

-

310

mW

-

905

mW

Source-drain diode

source current

[1]

-0.7

A

Per device

total power dissipation

[2]

-

390

mW

junction temperature

-55

150

°C

ambient temperature

-55

150

°C

storage temperature

-65

150

°C

Fig 1.

Normalized total power dissipation as a

function of junction temperature

Fig 2.

Normalized continuous drain current as a

function of junction temperature

−75

175

125

25

75

−25

017aaa123

40

80

120

(%)

0

−75

175

125

25

75

−25

017aaa124

40

80

120

(%)

0