PMGD130UN datasheet(2/16 Pages) NEXPERIA

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Product profile

1.1 General description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363

Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

1.2 Features and benefits

 Low threshold voltage

 Very fast switching

 Trench MOSFET technology

1.3 Applications

 Relay driver

 High-speed line driver

 Low-side loadswitch

 Switching sircuits

1.4 Quick reference data

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.

PMGD130UN

20 V, dual N-channel Trench MOSFET

Rev. 1 — 1 June 2012

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

VDS

drain-source voltage

Tj = 25 °C

--20

VGS

gate-source voltage

-8

drain current

VGS =4.5 V; Tamb =25°C; t ≤ 5 s

[1]

--1.3

Static characteristics (per transistor)

RDSon

drain-source on-state

resistance

VGS =4.5 V; ID = 1.2 A; Tj = 25 °C

118

145

Ω

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