PBHV2160Z datasheet(4/13 Pages) NEXPERIA

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Nexperia

PBHV2160Z

600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor

PBHV2160Z

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Product data sheet

24 June 2015

4 / 13

9. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1]

190

K/W

Rth(j-a)

thermal resistance

from junction to

ambient

in free air

[2]

K/W

Rth(j-sp)

thermal resistance

from junction to solder

point

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

aaa-013426

102

103

Zth(j-a)

(K/W)

10-1

10-5

10-2

10-4

102

10-1

tp (s)

10-3

103

duty cycle = 1

0.01

0.02

0.05

0.1

0.2

0.33

0.5

0.75

FR4 PCB, single-sided copper, tin-plated and standard footprint.

Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

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10-5

10-2

10-4

102

10-1

tp (s)

10-3

103

102

Zth(j-a)

(K/W)

10-1

duty cycle = 1

0.01

0.02

0.05

0.1

0.2

0.33

0.5

0.75

FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

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