Nexperia

PBHV2160Z

600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor

PBHV2160Z

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Product data sheet

24 June 2015

13 / 13

15. Contents

1

General description ............................................... 1

2

Features and benefits ............................................1

3

Applications ........................................................... 1

4

Quick reference data ............................................. 1

5

Pinning information ...............................................2

6

Ordering information .............................................2

7

Marking ................................................................... 2

8

Limiting values .......................................................3

9

Thermal characteristics .........................................4

10

Characteristics .......................................................5

11

Package outline ..................................................... 8

12

Soldering ................................................................ 9

13

Revision history ...................................................10

14

Legal information .................................................11

14.1

Data sheet status ............................................... 11

14.2

Definitions ...........................................................11

14.3

Disclaimers .........................................................11

14.4

Trademarks ........................................................ 12

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Date of release: 24 June 2015