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PBHV2160Z Datasheet(PDF) 1 Page - Nexperia B.V. All rights reserved

Part # PBHV2160Z
Description  600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
PDF  13 Pages
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Manufacturer  NEXPERIA [Nexperia B.V. All rights reserved]
Direct Link  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved

PBHV2160Z Datasheet(HTML) 1 Page - Nexperia B.V. All rights reserved

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PBHV2160Z
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
24 June 2015
Product data sheet
1. General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223
(SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV3160Z
2. Features and benefits
• Low collector-emitter saturation voltage VCEsat
• High collector current capability
• High collector current gain hFE at high IC
3. Applications
• Electronic ballast for fluorecent lighting
• LED driver for LED chain module
• LCD backlighting
• HID front lighting
• Hook switch for wired telecom
• Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
600
V
IC
collector current
-
-
0.1
A


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