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S8233A Datasheet(PDF) 7 Page - Seiko Instruments Inc |
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S8233A Datasheet(HTML) 7 Page - Seiko Instruments Inc |
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7 / 30 page  BATTERY PROTECTION IC FOR 3-SERIAL-CELL PACK Rev.3.2_10 S-8233A Series Seiko Instruments Inc. 7 Electrical Characteristics Table 6 (1 / 2) (Ta = 25 °C unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Measure- ment condition Measure- ment circuit Detection voltage Over charge detection voltage1 VCU1 4.10 to 4.35 Adjustment VCU1 −0.05 VCU1 VCU1+0.05 V 1 1 Over charge release voltage1 VCD1 3.85 to 4.35 Adjustment VCD1 −0.10 VCD1 VCD1+0.10 V 1 1 Over discharge detection voltage1 VDD1 2.00 to 2.70 Adjustment VDD1 −0.08 VDD1 VDD1+0.08 V 1 1 Over discharge release voltage1 VDU1 2.00 to 3.70 Adjustment VDU1 −0.10 VDU1 VDU1+0.10 V 1 1 Over charge detection voltage 2 VCU2 4.10 to 4.35 Adjustment VCU2 −0.05 VCU2 VCU2+0.05 V 2 1 Over charge release voltage 2 VCD2 3.85 to 4.35 Adjustment VCD2 −0.10 VCD2 VCD2+0.10 V 2 1 Over discharge detection voltage 2 VDD2 2.00 to 2.70 Adjustment VDD2 −0.08 VDD2 VDD2+0.08 V 2 1 Over discharge release voltage 2 VDU2 2.00 to 3.70 Adjustment VDU2 −0.10 VDU2 VDU2+0.10 V 2 1 Over charge detection voltage3 VCU3 4.10 to 4.35 Adjustment VCU3 −0.05 VCU3 VCU3+0.05 V 3 1 Over charge release voltage3 VCD3 3.85 to 4.35 Adjustment VCD3 −0.10 VCD3 VCD3+0.10 V 3 1 Over discharge detection voltage3 VDD3 2.00 to 2.70 Adjustment VDD3 −0.08 VDD3 VDD3+0.08 V 3 1 Over discharge release voltage3 VDU3 2.00 to 3.70 Adjustment VDU3 −0.10 VDU3 VDU3+0.10 V 3 1 Over current detection voltage1 *1 VIOV1 0.15 to 0.50V Adjustment VIOV1 x 0.9 VIOV1 VIOV1 x 1.1 V 4 2 Over current detection voltage 2 VIOV2 VCC Reference 0.54 0.6 0.66 V 4 2 Over current detection voltage3 VIOV3 VSS Reference 1.0 2.0 3.0 V 4 2 Voltage temperature factor 1 *2 TCOE1 Ta=-20 to 70°C −1.0 0 1.0 mV/ °C − − Voltage temperature factor 2 *3 TCOE2 Ta=-20 to 70°C −0.5 0 0.5 mV/ °C − − Delay time Over charge detection delay time1 tCU1 CCCT=0.47 µF 0.5 1.0 1.5 s 9 6 Over charge detection delay time 2 tCU2 CCCT=0.47 µF 0.5 1.0 1.5 s 10 6 Over charge detection delay time3 tCU3 CCCT=0.47 µF 0.5 1.0 1.5 s 11 6 Over discharge detection delay time1 tDD1 CCDT=0.1 µF 20 40 60 ms 9 6 Over discharge detection delay time 2 tDD2 CCDT=0.1 µF 20 40 60 ms 10 6 Over discharge detection delay time3 tDD3 CCDT=0.1 µF 20 40 60 ms 11 6 Over current detection delay time1 tIOV1 CCOVT=0.1 µF 10 20 30 ms 12 7 Over current detection delay time 2 tIOV2 − 2 4 8 ms 12 7 Over current detection delay time3 tIOV3 FET gate capacitor =2000 pF 100 300 550 µs 12 7 Operating voltage Operating voltage between VCC and VSS *4 VDSOP − 2.0 − 24 V − − Current consumption Current consumption (during normal operation) IOPE V1=V2=V3=3.5 V − 20 50 µA 5 3 Current consumption for cell 2 ICELL2 V1=V2=V3=3.5 V −300 0 300 nA 5 3 Current consumption for cell 3 ICELL3 V1=V2=V3=3.5 V −300 0 300 nA 5 3 Current consumption at power down IPDN V1=V2=V3=1.5 V − − 0.1 µA 5 3 Internal resistance RVCM V1=V2=V3=3.5 V 0.40 0.90 1.40 M Ω 6 3 Resistance between VCC and VMP V1=V2=V3=3.5 V *5 0.20 0.50 0.80 M Ω 6 3 RVSM V1=V2=V3=1.5 V 0.40 0.90 1.40 M Ω 6 3 Resistance between VSS and VMP V1=V2=V3=1.5 V *5 0.20 0.50 0.80 M Ω 6 3 Input voltage CTL"H" Input voltage VCTL(H) − VCCx0.8 − − V − − CTL"L" Input voltage VCTL(L) − − − VCCx0.2 V − − |
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