Philips Semiconductors

PMWD30UN

Dual

µTrenchMOS™ ultra low level FET

Product data

Rev. 01 — 22 January 2003

4 of 12

9397 750 10835

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

4.

Thermal characteristics

4.1 Transient thermal impedance

Table 3:

Thermal characteristics

Symbol Parameter

Conditions

Min Typ Max

Unit

thermal resistance from junction to solder point

Figure 4

-

55

70

K/W

thermal resistance from junction to ambient

minimum footprint;

mounted on printed-circuit board

-

100 -

K/W

Fig 4.

Transient thermal impedance from junction to solder point as a function of pulse duration.

003aaa275

1

10

102

10-4

1

10

tp (s)

Zth(j-sp)

(K/W)

single pulse

δ = 0.5

0.2

0.1

0.05

0.02

tp

tp

T

P

t

T

δ =