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PMWD30UN Datasheet(PDF) 1 Page - NXP Semiconductors |
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PMWD30UN Datasheet(HTML) 1 Page - NXP Semiconductors |
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1 / 12 page ![]() PMWD30UN Dual µTrenchMOS™ ultra low level FET Rev. 01 — 22 January 2003 Product data M3D647 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMWD30UN in SOT530-1 (TSSOP8). 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information s Surface mounting package s Low profile s Very low threshold s Fast switching. s Portable appliances s PCMCIA cards s Battery management s Load switching. s VDS ≤ 30 V s ID ≤ 5A s Ptot ≤ 2.3 W s RDSon ≤ 33 mΩ Table 1: Pinning - SOT530-1, simplified outline and symbol Pin Description Simplified outline Symbol 1 drain1 (d1) SOT530-1 2,3 source1 (s1) 4 gate1 (g1) 5 gate2 (g2) 6,7 source2 (s2) 8 drain2 (d2) MBK885 Top view 14 85 s1 d1 g1 s2 MSD901 d2 g2 |
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