2N7002 datasheet(2/14 Pages) MICROCHIP

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2N7002

DS20005797A-page 2

 2018 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings†

Drain-to-Source Voltage ...................................................................................................................................... BVDSS

Drain-to-Gate Voltage ......................................................................................................................................... BVDGS

Gate-to-Source Voltage ......................................................................................................................................... ±30V

Operating Ambient Temperature, TA ................................................................................................... –55°C to +150°C

Storage Temperature, TS ..................................................................................................................... –55°C to +150°C

† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only, and functional operation of the device at those or any other conditions above those

indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for

extended periods may affect device reliability.

DC ELECTRICAL CHARACTERISTICS

Electrical Specifications: TA = 25°C unless otherwise specified. (Note 1)

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

Drain-to-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 10 µA

Gate Threshold Voltage

VGS(th)

—

2.5

VGS = VDS, ID = 250 µA

Change in VGS(th) with Temperature

∆VGS(th)

—

–5.5

mV/°C

VGS = VDS, ID = 250 µA

(Note 2)

Gate Body Leakage Current

IGSS

—

±100

VGS = ±20V, VDS = 0V

Zero-Gate Voltage Drain Current

IDSS

—

µA

VGS = 0V, VDS = Maximum

Rating

—

500

VGS = 0V, VDS = 0.8 Maximum

Rating, TA = 125°C (Note 2)

On-State Drain Current

ID(ON)

500

—

VGS = 10V, VDS = 25V

Static Drain-to-Source On-State

Resistance

RDS(ON)

—

7.5

Ω

VGS = 5V, ID = 50 mA

—

7.5

VGS = 10V, ID = 500 mA

Change in RDS(ON) with Temperature

∆RDS(ON)

—

%/°C

VGS = 10V, ID = 500 mA

(Note 2)

Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated.



(Pulse test: 300 µs pulse, 2% duty cycle)

2: Specification is obtained by characterization and is not 100% tested.

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