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2N7002 Datasheet(PDF) 3 Page - Microchip Technology

Part # 2N7002
Description  N-Channel Enhancement-Mode Vertical DMOS FET
PDF  14 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

2N7002 Datasheet(HTML) 3 Page - Microchip Technology

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AC ELECTRICAL CHARACTERISTICS
Electrical Specifications: TA = 25°C unless otherwise specified. (Note 2)
Parameter
Sym.
Min.
Typ.
Max.
Unit
Conditions
Forward Transconductance
GFS
80
—
—
mmho VDS = 25V, ID = 500 mA
Input Capacitance
CISS
—
—
50
pF
VGS = 0V, 
VDS = 25V, 
f = 1 MHz
Common Source Output Capacitance
COSS
—
—
25
Reverse Transfer Capacitance
CRSS
—
—
5
Turn-On Time
t(ON)
—
—
20
ns
VDD = 30V,
ID = 200 mA, 
RGEN = 25Ω
Turn-Off Time
t(OFF)
—
—
20
DIODE PARAMETER (Note 2)
Diode Forward Voltage Drop
VSD
—
1.2
—
V
VGS = 0V, ISD = 200 mA (Note 1)
Reverse Recovery Time
trr
—
400
—
ns
VGS = 0V, ISD = 800 mA
Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated.
(Pulse test: 300 µs pulse, 2% duty cycle)
2: Specification is obtained by characterization and is not 100% tested.
TEMPERATURE SPECIFICATIONS
Parameter
Sym.
Min.
Typ.
Max.
Unit
Conditions
TEMPERATURE RANGE
Operating Ambient Temperature
TA
–55
—
+150
°C
Storage Temperature
TS
–55
—
+150
°C
PACKAGE THERMAL RESISTANCE
3-lead SOT-23
JA
—
203
—
°C/W
THERMAL CHARACTERISTICS
Package
ID (Note 1)
(Continuous)
(mA)
ID
(Pulsed)
(mA)
Power Dissipation at
TA = 25°C
(W)
IDR (Note 1)
(mA)
IDRM
(mA)
3-lead SOT-23
115
800
0.36
115
800
Note 1: ID (continuous) is limited by maximum TJ.
 2018 Microchip Technology Inc.
DS20005797A-page 3
2N7002



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