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2N7002 Datasheet(PDF) 3 Page - Microchip Technology |
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2N7002 Datasheet(HTML) 3 Page - Microchip Technology |
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3 / 14 page ![]() AC ELECTRICAL CHARACTERISTICS Electrical Specifications: TA = 25°C unless otherwise specified. (Note 2) Parameter Sym. Min. Typ. Max. Unit Conditions Forward Transconductance GFS 80 — — mmho VDS = 25V, ID = 500 mA Input Capacitance CISS — — 50 pF VGS = 0V, VDS = 25V, f = 1 MHz Common Source Output Capacitance COSS — — 25 Reverse Transfer Capacitance CRSS — — 5 Turn-On Time t(ON) — — 20 ns VDD = 30V, ID = 200 mA, RGEN = 25Ω Turn-Off Time t(OFF) — — 20 DIODE PARAMETER (Note 2) Diode Forward Voltage Drop VSD — 1.2 — V VGS = 0V, ISD = 200 mA (Note 1) Reverse Recovery Time trr — 400 — ns VGS = 0V, ISD = 800 mA Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. (Pulse test: 300 µs pulse, 2% duty cycle) 2: Specification is obtained by characterization and is not 100% tested. TEMPERATURE SPECIFICATIONS Parameter Sym. Min. Typ. Max. Unit Conditions TEMPERATURE RANGE Operating Ambient Temperature TA –55 — +150 °C Storage Temperature TS –55 — +150 °C PACKAGE THERMAL RESISTANCE 3-lead SOT-23 JA — 203 — °C/W THERMAL CHARACTERISTICS Package ID (Note 1) (Continuous) (mA) ID (Pulsed) (mA) Power Dissipation at TA = 25°C (W) IDR (Note 1) (mA) IDRM (mA) 3-lead SOT-23 115 800 0.36 115 800 Note 1: ID (continuous) is limited by maximum TJ. 2018 Microchip Technology Inc. DS20005797A-page 3 2N7002 |
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