MHT1000H datasheet(2/10 Pages) NXP

2 / 10 page

RF Device Data

Freescale Semiconductor, Inc.

MHT1000HR5

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

III

Table 4. Electrical Characteristics (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS =68 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Zero Gate Voltage Drain Leakage Current

(VDS =28 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

500

nAdc

On Characteristics

Gate Threshold Voltage

(VDS =10 Vdc, ID = 300 Adc)

VGS(th)

Vdc

Gate Quiescent Voltage

(VDD =28 Vdc, ID = 1300 mAdc, Measured in Functional Test)

VGS(Q)

2.8

Vdc

Drain--Source On--Voltage

(VGS =10 Vdc, ID =3 Adc)

VDS(on)

0.1

0.21

0.3

Vdc

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS =28 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Crss

—

Functional Tests (In Freescale Test Fifxture, 50 ohm system) VDD =28 Vdc, IDQ = 1300 mA, Pout = 28 W Avg., f = 2390 MHz, 2--Carrier

W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in

3.84 MHz Bandwidth @ 10 MHz Offset. Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain

Gps

15.2

Drain Efficiency

D

—

Intermodulation Distortion

IM3

—

--37

--35

dBc

Adjacent Channel Power Ratio

ACPR

—

--40

--38

dBc

Input Return Loss

IRL

—

--15

—

1. Part internally matched both on input and output.

MHT1000H Datasheet(PDF) 2 Page - NXP Semiconductors

MHT1000H Datasheet(HTML) 2 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL