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F730 Datasheet(PDF) 1 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd |
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F730 Datasheet(HTML) 1 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd |
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1 / 12 page  Jiangsu Donghai Semiconductor Technology CO.,LTD. Rev. 1.0 Page 1 of 12 730/F730/I730/ E730/B730/D730 6A 400V N-channel Enhancement Mode Power MOSFET 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Rating Units 730/I730/E730 B730/D730 F730 Drian-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS ±30 V Continuous Drain Current TC=25℃ ID 6 A TC=100℃ 4.2 A Pulsed Drain Current(1) IDM 24 A Single Pulse Avalanche Energy(4) EAS 200 mJ Repetitive Avalanche Energy(4) EAR 26 mJ Repetitive Avalanche Current(4) IAR 2.3 A Peak Diode Recovery dv/dt(5) dv/dt 5 V/ns Power Dissipation Ta=25℃ Ptot 2.0 2.0 W TC=25℃ Ptot 75 30 W Gate-Source ESD (HBM-C=100pF,R=1.5KΩ） VESD(G-S) 3000 V Isolation Voltage VISO / 2500 V Junction Temperature Tj -55～150 ℃ storage Temperature Tstg -55～150 ℃ Maximum Temperature for soldering TL 300 ℃ 4.2 Thermal Characteristics Parameter Symbol Rating Unit 730/I730/E730 B730/D730 F730 Thermal Resistance,Junction to Case-sink RthJC 1.67 4.17 ℃ /W Thermal Resistance,Junction to Ambient RthJA 62.5 62.5 ℃ /W 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast switching ● Low on-state resistance(Rdson≤1 Ω) ● Low gate charge(Typ: 14.5nC) ● Low reverse transfer capacitances(Typ: 7.5pF) ● 100% single pulse avalanche energy test ● 100% ΔVDS test 3 Applications ● Used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circuit of electron ballast and adaptor. VDSS = 400V RDS(on) (TYP)= 0.75Ω ID = 6A TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B |
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