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F730 Datasheet(PDF) 2 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd |
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F730 Datasheet(HTML) 2 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd |
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2 / 12 page  Jiangsu Donghai Semiconductor Technology CO.,LTD. Rev. 1.0 Page 2 of 12 730/F730/I730/ E730/B730/D730 4.3 Electrical Characteristics(Tc=25℃,unless otherwise noted) Parameter Symbol Test Condition Value Units Min Typ Max Off Characteristics Drain-to-Source Breakdown Voltage BVDSS ID=250μA,VGS=0V 400 -- -- V Drain-to-Source Leakage Current IDSS VDS=400V,VGS=0V,TC=25℃ -- -- 1 μA VDS=320V,VGS=0V,TC=125℃ -- -- 100 μA Gate-to-Source Leakage Current IGSS VGS=±20V -- -- ±10 μA On Characteristics Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 -- 4 V Drain-to-Source on-state Resistance RDS(on) VGS=10V,ID=3A -- 0.75 1 Ω Forward Transfer Conductance gfs VDS=15V,ID=3A -- 4.5 -- S Dynamic Characteristics Input Capacitance Ciss VGS=0V,VDS=25V,f=1.0MHz -- 540 -- pF Output Capacitance Coss -- 68 -- Reverse Transfer Capacitance Crss -- 7.5 -- Switching Characteristics Turn-on Delay Time td(on) ID=6A, VDD=200V, RG=9.1Ω -- 9 -- nS Turn-on Rise Time tr -- 11 -- Turn-off Delay Time td(off) -- 29 -- Turn-off Fall Time tf -- 16 -- Total Gate Charge Qg ID=6A,VDD=200V,VGS=10V -- 14.5 -- nC Gate-to-Source Charge Qgs -- 3 -- Gate-to-Drain(“Miller”) Charge Qgd -- 6.5 -- Drain-Source Diode Characteristics Diode Forward Voltage(3) VFSD VGS=0V,IS=6A -- -- 1.5 V Diode Forward Current IS -- -- 6 A Reverse Recovery Time(3) trr TJ=25℃,IF=6A, dIF/dt=100A/μS,VGS=0V -- 388 -- nS Reverse Recovery Charge(3) Qrr -- 1720 -- nC Notes： 1: Repetitive rating, pulse width limited by maximum junction temperature. 2: Surface mounted on FR4 Board, t≤10sec. 3: Pulse width ≤ 300μs, duty cycle ≤ 2%. 4. L=10mH,ID=6.3A,VDD=50V,VGATE=400V,Start TJ=25℃. 5. ISD=6.0A,di/dt≤100A/μs,VDD≤BVDSS, Start TJ=25℃. |
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