LP2371LT3G datasheet(2/5 Pages) LRC

2 / 5 page

LP2371LT1G, S-LP2371LT1G

P-Channel 100-V (D-S) MOSFET

5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)

Drain–Source Breakdown Voltage

(VGS = 0, ID = -250μA)

Gate Threshold Voltage

(VDS = VGS, ID = -250μA)

Gate Leakage Current

(VDS =0V, VGS =±20V)

Zero Gate Voltage Drain Current

(VGS = 0V, VDS = -80 V)

(VGS = 0V, VDS = -80 V,TJ = 55°C)

Static Drain–Source On–State Resistance

(VGS = -10 V, ID = -1 A)

(VGS = -4.5 V, ID = -0.9 A)

Diode Forward Voltage

(VGS = 0 V, IS = -0.8 A)

Total Gate Charge

(VGS = -4.5 V, ID =-1A,VDS= -50 V)

Gate-Source Charge

(VGS = -4.5 V, ID =-1A,VDS= -50 V)

Gate-Drain Charge

(VGS = -4.5 V, ID =-1A,VDS= -50 V)

Input Capacitance

(VGS = 0 V, f = 1.0MHz,VDS= -15 V)

Output Capacitance

(VGS = 0 V, f = 1.0MHz,VDS= -15 V)

Reverse Transfer Capacitance

(VGS = 0 V, f = 1.0MHz,VDS= -15 V)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

3.Pulse Test: Pulse Width ≤

300 μs, Duty Cycle ≤2.0%.

-1

IGSS

±100

VBRDSS

472

Coss

Crss

18.6

14.4

1.4

-3.5

1.1

IDSS

-25

(VDD = -50V, RL= 50Ω

ID = -1A, VGEN = -10V

RG = 6.2Ω)

19.9

1.9

3.6

RDS(on)

-1

td(on)

td(off)

1.5

Qgd

1.2

-100

μA

Ciss

-0.81

VGS(th)

STATIC

Characteristic

Unit

Symbol

Min.

Typ.

Max.

VSD

DYNAMIC

Qgs

1.6

Leshan Radio Company, LTD.

Rev.A May. 2020

2/5

LP2371LT3G Datasheet(PDF) 2 Page - Leshan Radio Company

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