LP2371LT3G datasheet(1/5 Pages) LRC

Part #	LP2371LT3G

Description	P-Channel 100-V (D-S) MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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1 / 5 page

1. FEATURES

●

RDS(ON)≤

1.4Ω, Vgs@-10V

●

RDS(ON)≤

1.5Ω, Vgs@-4.5V

●

Fast switching speed

●

Low RDS(on) trench technology

●

We declare that the material of product compliance with

RoHS requirements and Halogen Free.

●

S- prefix for automotive and other applications requiring

unique site and control change requirements; AEC-Q101

qualified and PPAP capable.

2. APPLICATIONS

●

PoE Power Sourcing Equipment

●

PoE Powered Devices

●

Telecom DC/DC converters

●

White LED boost converters

3. DEVICE MARKING AND ORDERING INFORMATION

4. MAXIMUM RATINGS(Ta = 25ºC)

Junction Temperature

Storage Temperature Range

1.Surface Mounted on 1” x 1” FR4 Board.

2.Pulse width limited by maximum junction temperature.

Device

VGS

LP2371LT1G

S-LP2371LT1G

P-Channel 100-V (D-S) MOSFET

Unit

VDSS

Marking

Shipping

LP2371LT1G

3000/Tape&Reel

V

LP2371LT3G

10000/Tape&Reel

Symbol

Parameter

Drain–Source Voltage

Gate–to–Source Voltage – Continuous

Ta=25℃

Ta=70℃

Continuous Drain Current(Note 1)

Limits

Thermal Resistance-Junction to Ambient(Note 1)

Tj

Tstg

RθJA

Steady State

t≤10s

100

166

150

-55~+150

Ta=70℃

Power Dissipation(Note 1)

PD

Pulsed Drain Current(Note 2)

IDM

Ta=25℃

ID

Continuous Source Current (Diode Conduction)

IS

-1.6

℃

℃/W

-100

±20

-1

-0.8

-10

1.3

0.8

W

A

SOT23(TO-236)

Leshan Radio Company, LTD.

E9

Rev.A May. 2020

1/5

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