6

OPA2863

SBOS982A – JUNE 2020 – REVISED JUNE 2020

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Continuous input current limit for both the ESD diodes to supply pins and amplifier differential input clamp diode. The differential input

clamp diode limits the voltage across it to 1 V with this continuous input current flowing through it.

(3)

Long-term continuous current for electromigration limits.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage

13

V

Input voltage

V

Differential input voltage

±1

V

±10

mA

±30

mA

Continuous power dissipation

See Thermal Information

Maximum junction temperature

150

°C

Operating free-air temperature

–40

125

°C

Storage temperature

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic

discharge

±2000

V

Charged-device model (CDM), per JEDEC specification

±1000

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Single-supply positive voltage

2.7

10

12.6

V

Ambient temperature

–40

25

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

OPA2863

UNIT

DGK (VSSOP)

8 PINS

Junction-to-ambient thermal resistance

180.3

°C/W

Junction-to-case (top) thermal resistance

67.5

°C/W

Junction-to-board thermal resistance

101.9

°C/W

Junction-to-top characterization parameter

9.8

°C/W

Junction-to-board characterization parameter

100.1

°C/W

Junction-to-case (bottom) thermal resistance

–

°C/W