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IL755 Datasheet(PDF) 2 Page - Vishay Siliconix |
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IL755 Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page ![]() www.vishay.com 2 Document Number 83641 Rev. 1.4, 26-Oct-04 IL755/ ILD755 Vishay Semiconductors Output Coupler Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Parameter Test condition Part Symbol Value Unit Collector-emitter breakdown voltage BVCEO 60 V Collector-base breakdown voltage BVCBO 60 V Power dissipation IL755-1 Pdiss 200 mW IL755-2 Pdiss 200 mW ILD755-1 Pdiss 150 mW ILD755-2 Pdiss 150 mW Derate linearly from 25 °C IL755-1 2.6 mW/°C IL755-2 2.6 mW/°C ILD755-1 2.0 mW/°C ILD755-2 2.0 mW/°C Parameter Test condition Part Symbol Value Unit Isolation test voltage (PK) t = 1.0 sec. VISO 7500/5300 VACPK/VRMS Total power dissipation (LED plus detector) IL755-1 Ptot 250 mW IL755-2 Ptot 250 mW ILD755-1 Ptot 400 mW ILD755-2 Ptot 400 mW Derate linearly from 25 °C IL755-1 3.0 mW/°C IL755-2 3.0 mW/°C ILD755-1 3.0 mW/°C ILD755-2 3.0 mW/°C Creepage ≥ 7mm Clearance ≥ 7mm Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Lead soldering time at 260 °C 10 sec. Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = ± 10 mA VF 1.2 1.5 V Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter breakdown voltage IC = 1.0 mA BVCEO 60 75 V Collector-base breakdown voltage IC = 10 µABVCBO 60 90 V Collector-emitter leakage current VCE = 10 V ICEO 10 100 nA |
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