| Electronic Components Datasheet Search |
|
THVD8010DDFR Datasheet(PDF) 4 Page - Texas Instruments |
|
|
|
|||||||||||||||||||||||||||||
THVD8010DDFR Datasheet(HTML) 4 Page - Texas Instruments |
|
4 / 27 page ![]() 6 Specifications 6.1 Absolute Maximum Ratings see (1) MIN MAX UNIT VCC Supply voltage –0.5 7 V VL Input voltage at any logic pin (D, MODE or F_SET) –0.3 5.7 V VA, VB Voltage at A or B inputs (differential or with respect to GND) –18 18 V IO Receiver output current –24 24 mA TJ Junction temperature 170 °C TSTG Storage temperature –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Section 6.4 is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) A and B pins to GND ±16,000 V All pins ±4,000 Charged-device model (CDM), per JEDEC specification JESD22-C101(2) All pins ±1,500 (1) JEDEC document JEP155 states that 500-V HBM allows safemanufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safemanufacturing with a standard ESD control process. 6.3 ESD Ratings - IEC Specifications VALUE UNIT V(ESD) Electrostatic discharge IEC 61000-4-2 ESD contact discharge, A and B pins to GND ±8 kV IEC 61000-4-2 ESD air gap discharge, A and B pins to GND ±15 IEC 61000-4-4 electrical fast transient, A and B pins to GND ±4 6.4 Recommended Operating Conditions MIN NOM MAX UNIT VCC Supply voltage 3 5.5 V VID Input differential voltage (A and B pins) –7 12 V VCM Operational common mode voltage (A and B pins) –7 12 V VIH High-level input voltage (D and MODE pins) 2 VCC V VIL Low-level input voltage (D and MODE pins) 0 0.8 V IO Output current Driver –60 60 mA Receiver –4 4 RF_SET Carrier frequency selection resistor 32 80 kΩ ΔR F_SET Carrier frequency selection resistor tolerance –2 2 % 1/tUI Data rate Modulation mode(1) f0 / 10 bps CF_SET Recommended load capacitance on F_SET pin 100 pF TA Operating ambient temperature –40 125 °C (1) f0 is the carrier frequency (in Hz) set by the external resistor between F_SET and GND pins. THVD8010 SLLSFK4 – NOVEMBER 2020 www.ti.com 4 Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: THVD8010 |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |