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FTK138D Datasheet(PDF) 2 Page - First Silicon Co., Ltd |
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FTK138D Datasheet(HTML) 2 Page - First Silicon Co., Ltd |
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2 / 5 page ![]() 2015. 01. 10 2/5 FTK138D Revision No : 0 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) V(BR)DSS 50 – – Vdc Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) IDSS – – – – 0.1 0.5 µ Adc Gate–Source Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS – – ± 0.1 µ Adc ON CHARACTERISTICS (Note 1.) Gate–Source Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.5 – 1.5 Vdc Static Drain–to–Source On–Resistance (VGS = 2.75 Vdc, ID < 200 mAdc, TA = –40°C to +85°C) (VGS = 5.0 Vdc, ID = 200 mAdc) rDS(on) – – 5.6 – 10 3.5 Ohms Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Ciss – 42 pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Coss – 15 Transfer Capacitance (VDG = 25 Vdc, VGS = 0, f = 1 MHz) Crss – 3 SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time (V td(on) – – 5 ns Turn–Off Delay Time (VDD = 30 Vdc, ID = 0.2 Adc,) td(off) – – 7 1. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤2%. 2. Switching characteristics are independent of operating junction temperature. – – – DYNAMIC CHARACTERISTICS |
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