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FTK1012S Datasheet(PDF) 4 Page - First Silicon Co., Ltd |
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FTK1012S Datasheet(HTML) 4 Page - First Silicon Co., Ltd |
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4 / 5 page ![]() 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0 5 10 15 20 25 30 35 40 45 50 0 2 4 6 VGS,Gate to Source Voltage(V) ID=200mA 125℃ 25℃ -50℃ 0 0.1 0.2 0.3 0.4 0.5 0.6 -50 -25 0 25 50 75 100 125 TJ,Temperature(℃) VGS=1.8V,ID=350mA VGS=4.5V,ID=600mA 40 50 60 70 80 90 100 110 120 0 2 4 6 8 10 VDS Drain To Source Voltage(V) f=1MHz Ta=25℃ 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 -50 -25 0 25 50 75 100 125 Tj,Temperature(℃) ID=0.25mA RDSON vs.VGS RDSON vs. TJ Ciss vs.VDS VGSTH vs.TJ N-Channel 1.8-V (G-S) MOSFET FTK1012S 2020. 02. 05 4/5 Revision No : 0 |
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