1. FEATURES

●

Power MOSFET: 1.8-V Rated

●

Gate-Source ESD Protected

●

High-Side Switching

●

●

Low Threshold: 0.8 V (typ)

●

Fast Switching Speed: 10 ns

●

We declare that the material of product compliance with

RoHS requirements and Halogen Free.

2. BENEFITS

●

Ease in Driving Switches

●

Low Offset (Error) Voltage

●

Low-Voltage Operation

●

High-Speed Circuits

●

Low Battery Voltage Operation

3. APPLICATIONS

●

Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories.

●

Battery Operated Systems

●

Power Supply Converter Circuits

●

Load/Power Switching Cell Phones, Pagers

4. DEVICE MARKING AND ORDERING INFORMATION

5. MAXIMUM RATINGS(Ta = 25ºC)

1.Pulse width limited by maximum junction temperature.

2.Surface Mounted on FR4 Board.

600

500

mA

400

350

IDM

1000

IS

275

250

Unit

VDS

20

V

−55 ~+150

℃

PD

mW

Parameter

Drain-Source Voltage

Gate-Source Voltage

TA = 25℃

TA = 85℃

Pulsed Drain Current(Note 1)

Continuous Source Current (diode conduction)(Note 2)

Maximum Power Dissipation

VGS

±6

V

225

Symbol

5 secs

Steady State

Marking

Shipping

FTK1012S

A2

3000/Tape&Reel

Device

TJ , Tstg

Operating Junction and Storage Temperature Range

Continuous Drain Current (TJ = 150℃)

(Note 2)

ID

SOT-23

(Top View)

Drain

Gate

3

1

2

Source

N-Channel 1.8-V (G-S) MOSFET

Low On-Resistance: 0.7Ω

SEMICONDUCTOR

TECHNICAL DATA

FTK1012S

2020. 02. 05

1/5

Revision No : 0