Static

Characteristic

Gate Threshold Voltage

(VDS = VGS , ID = 250µA )

Gate-Body Leakage

(VDS = 0 V, VGS = ±4.5 V)

Zero Gate Voltage Drain Current

(VDS = 20 V, VGS = 0 V )

(VDS = 20 V, VGS = 0 V, TJ = 85℃)

On-State Drain Current(Note 1)

(VDS = 5 V, VGS = 4.5 V)

Drain-Source On-State Resistance(Note 1)

(VGS = 4.5 V, ID = 600 mA)

(VGS = 2.5 V, ID = 500 mA)

(VGS = 1.8 V, ID = 350 mA)

Forward Transconductance(Note 1)

(VDS = 10 V, ID = 400 mA)

Diode Forward Voltage(Note 1)

(IS = 150 mA, VGS = 0 V)

Dynamic(Note 2)

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

3.Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.

4.Guaranteed by design, not subject to production testing.

(VDD = 10 V, RL

mA, VGEN = 4.5

td(on)

ns

tr

td(off)

25

tf

11

0.9

0.45

(VDS = 10 V,

VGS = 4.5 V, ID

= 250 mA)

Qg

pC

Qgs

Qgd

225

Symbol

Min.

Max.

Unit

Typ.

IGSS

VSD

nA

-

5

mA

-

-

0.53

0.85

VGS(th)

V

µA

±0.5

±1

-

µA

0.41

0.7

0.7

1.25

gfs

S

1

IDSS

-

ID(on)

700

RDS(on)

V

-

5

5

0.8

1.2

750

75

-

0.3

100

VGS = 0 V, VDS

= 0 V, f = 1MHz

VGS = 0 V, VDS

= 10 V, f = 1MHz

Ciss

Coss

Crss

Ciss

Coss

Crss

12.2

8

pF

pF

80

50

35.6

58.4

N-Channel 1.8-V (G-S) MOSFET

FTK1012S

2020. 02. 05

2/5

Revision No : 0

= 47Ω ,ID=200

V, RG = 10Ω)

Ω