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F0453CEVB Datasheet(PDF) 13 Page - Renesas Technology Corp |
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F0453CEVB Datasheet(HTML) 13 Page - Renesas Technology Corp |
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13 / 30 page ![]() F0453C Datasheet © 2020 Renesas Electronics Corporation 13 May 1, 2020 Electrical Characteristics: 3400MHz–3600MHz [2] Table 8. Electrical Characteristics: RX Path in Rx Mode Cascaded Performance and TX Performance See the F0453C Application Circuit. Specifications apply when operated as an Rx RF amplifier with VDD = +3.3V, fRF = 3500MHz, TEPAD = +25°C, STBY = LOW, RX output power = -10dBm, ZS = ZL = 50Ω, and EVKit trace and connector losses are de-embedded unless otherwise noted. Parameter Symbol Condition Minimum Typical Maximum Units Output Third-Order Intercept Point OIP31 Pout = 0dBm/tone 5MHz tone separation 23 dBm OIP32 Pout = 0dBm/tone 5MHz tone separation TEPAD = -40 to 105°C 20 OIP33 Pout = 0dBm/tone 5MHz tone separation Low Gain Mode 23 OIP34 Pout = 0dBm/tone 5MHz tone separation Low Gain Mode TEPAD = -40 to 105°C 18 Output 1dB Compression OP1dB1 High Gain Mode [b] 15 dBm OP1dB2 High Gain Mode TEPAD = -40 to 105°C G-24 OP1dB3 Low Gain Mode 14 OP1dB4 Low Gain Mode TEPAD = -40 to 105°C G-18 Channel Isolation ISOCH RFISO1 = �����������������1_������������������������ ����������������2_������������������������ ����������������� with -60 ≤ SW1_IN ≤ -30dBm RFISO2 = �����������������2_������������������������ ����������������1_������������������������ ����������������� with -60 ≤ SW2_IN ≤ -30dBm 55 65 dB RF Switch Isolation ISOSW Tx Mode Measured at SW_IN to RX_OUT of the same channel 59 69 dB [a] Items in Minimum/Maximum columns in bold italics are guaranteed by test. Items in Minimum/Maximum columns NOT in bold italics are guaranteed by design characterization. [b] In the OP1dB calculation formula, “G” denotes the gain of each part instance at the frequency of interest and appropriate High / Low gain state. |
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