F0453CEVB datasheet(17/30 Pages) RENESAS

17 / 30 page

F0453C Datasheet

May 1, 2020

Electrical Characteristics: 3800MHz–4000MHz [2]

Table 12. Electrical Characteristics: RX Path in Rx Mode Cascaded Performance and TX Performance

See the F0453C Application Circuit. Specifications apply when operated as an Rx RF amplifier with VDD = +3.3V, fRF = 3900MHz, TEPAD = +25°C,

STBY = LOW, RX output power = -10dBm, ZS = ZL = 50Ω, and EVKit trace and connector losses are de-embedded unless otherwise noted.

Parameter

Symbol

Condition

Minimum

Typical

Maximum

Units

Output Third-Order Intercept Point

OIP31

Pout = 0dBm/tone

5MHz tone separation

dBm

OIP32

Pout = 0dBm/tone

5MHz tone separation

TEPAD = -40°C to 105°C

OIP33

Pout = 0dBm/tone

5MHz tone separation

Low Gain Mode

OIP34

Pout = 0dBm/tone

5MHz tone separation

Low Gain Mode

TEPAD = -40°C to 105°C

Output 1dB Compression

OP1dB1

High Gain Mode [b]

dBm

OP1dB2

High Gain Mode

TEPAD = -40°C to 105°C

G-24

OP1dB3

Low Gain Mode

OP1dB4

Low Gain Mode

TEPAD = -40°C to 105°C

G-18

Channel Isolation

ISOCH

RFISO1 =

��1_��

��2_��

��

with -60 ≤ SW1_IN ≤ -30dBm

RFISO2 =

��2_��

��1_��

��

with -60 ≤ SW2_IN ≤ -30dBm

RF Switch Isolation

ISOSW

Tx Mode

Measured at SW_IN to

RX_OUT of the same channel

[a] Items in Minimum/Maximum columns in bold italics are guaranteed by test. Items in Minimum/Maximum columns NOT in bold italics are

guaranteed by design characterization.

[b] In the OP1dB calculation formula, “G” denotes the gain of each part instance at the frequency of interest and appropriate High / Low gain state.

F0453CEVB Datasheet(PDF) 17 Page - Renesas Technology Corp

F0453CEVB Datasheet(HTML) 17 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30

Datasheet Download

Link URL