G

D

S

SOT– 23 (TO–236AB)

●

Symbol

-20

± 8

-2.3

-8

0.9

0.57

-55 to 150

Junction-to-Ambient Thermal Resistance (PCB mounted)

2)

140

Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation

3. Guaranteed by design; not subject to production testing

Continuous Drain Current

Gate-Source Voltage

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Junction-to-Case Thermal Resistance

Parameter

V

A

W

Drain-Source Voltage

Pulsed Drain Current

1)

20V P-Channel Enhancement-Mode MOSFET

Low on-resistance

Ω

Ω

●

Features

High Density Cell Design For Ultra Low On-Resistance

Fully Characterized Avalanche Voltage and Current

Improved Shoot-Through FOM

1

3

2

2012. 08. 27

1/4

SEMICONDUCTOR

TECHNICAL DATA

FTK2301

Revision No : 0

1

3

2

Limit

Unit

Device

Marking

Shipping

FTK2301

01

3000/Tape&Reel

● We declare that the material of product are Halogen Free and

compliance with RoHS requirements.