FTK2301 datasheet(2/4 Pages) FS

2 / 4 page

Note: Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%.

ELECTRICAL CHARACTERISTICS

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = -250 µA

BVDSS

-20

–

Drain-Source On-State Resistance

RDS(ON)

-0.45

150

-0.95

Zero Gate Voltage Drain Current

IDSS

±100

Forward Transconductance

-1

6.5

Ω

Qgs

Dynamic 3)

Total Gate Charge

Qgd

Gate-Source Charge

td(on)

Gate-Drain Charge

Turn-On Rise Time

Turn-Off Delay Time

Ciss

Source-Drain Diode

Max. Diode Forward Current

-2.4

Parameter

Symbol

Min

Max

Unit

Typ

2012. 08. 27

2/4

FTK2301

Revision No : 0

Turn-Off Fall Time

Input Capacitance

Output Capacitance

Diode Forward Voltage

VSD

100

-1.2

-0.8

Test Condition

Drain-Source On-State Resistance

Gate Threshold Voltage

Gate Body Leakage

Gate Resistance

Turn-On Delay Time

Reverse Transfer Capacitance

RDS(ON)

VGS(th)

IGSS

gfS

td(off)

Coss

Crss

VGS = -4.5V, ID = -2.8A

VDS = VGS, ID = -250 µA

VGS = -2.5V, ID = -2.0A

VDS = -9.6V, VGS = 0V

VGS = ±8V, VDS = 0V

VDS = -5V, ID = -4.0A

VDS = -6V, ID = -2.8A

VGS = -4.5V

VDD = -6V, RL = 6Ω

ID = -1A, VGEN = -4.5V

RG = 6Ω

VDS = -6V, VGS = 0V

f = 1.0MHz

IS = -0.75A, VGS = 0V

15.23

5.49

2.74

17.28

3.73

36.05

6.19

882.51

145.54

97.26

mΩ

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