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FTK3404 Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK3404
Description  N-Channel Enhancement Mode Field Effect Transistor
PDF  4 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK3404 Datasheet(HTML) 2 Page - First Silicon Co., Ltd

  FTK3404 Datasheet HTML 1Page - First Silicon Co., Ltd FTK3404 Datasheet HTML 2Page - First Silicon Co., Ltd FTK3404 Datasheet HTML 3Page - First Silicon Co., Ltd FTK3404 Datasheet HTML 4Page - First Silicon Co., Ltd  
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2015. 01. 27
2/4
FTK3404
Revision No : 0
Electrical characteristics (Ta=25
℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR) DSS
VGS = 0V, ID =250µA
30
V
Zero gate voltage drain current
IDSS
VDS =30V,VGS = 0V
1
µA
Gate-body leakage current
IGSS
VGS =±20V, VDS = 0V
±100
nA
Gate threshold voltage
VGS(th)
VDS =VGS, ID =250µA
1
3
V
VGS =10V, ID =5.8A
30
mΩ
Drain-source on-resistance (note 1)
RDS(on)
VGS =4.5V, ID =4.8A
42
mΩ
Forward tranconductance (note 1)
gFS
VDS =5V, ID =5.8A
5
S
Diode forward voltage
VSD
IS=1A
1
V
DYNAMIC PARAMETERS (note 2)
Input capacitance
Ciss
820
pF
Output capacitance
Coss
118
pF
Reverse transfer capacitance
Crss
VDS =15V,VGS =0V,f =1MHz
85
pF
Gate resistance
Rg
VDS =0V,VGS =0V,f =1MHz
1.5
Ω
SWITCHING PARAMETERS(note 2)
Turn-on delay time
td(on)
6.5
ns
Turn-on rise time
tr
3.1
ns
Turn-off delay time
td(off)
15.1
ns
Turn-off fall time
tf
VGS=10V,VDS=15V,
RL=2.6Ω,RGEN=3Ω
2.7
ns
Note :
1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%.
2. These parameters have no way to verify.



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