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FTK4008 Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK4008
Description  N-CH 40V Fast Switching MOSFETs
PDF  5 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK4008 Datasheet(HTML) 2 Page - First Silicon Co., Ltd

  FTK4008 Datasheet HTML 1Page - First Silicon Co., Ltd FTK4008 Datasheet HTML 2Page - First Silicon Co., Ltd FTK4008 Datasheet HTML 3Page - First Silicon Co., Ltd FTK4008 Datasheet HTML 4Page - First Silicon Co., Ltd FTK4008 Datasheet HTML 5Page - First Silicon Co., Ltd  
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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
40
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.032
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V , ID=4A
---
30
37
mΩ
VGS=4.5V , ID=3A
---
40
50
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.0
1.5
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-4.5
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=32V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=32V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=± 20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=4A
---
8
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2.4
4.8
Ω
Qg
Total Gate Charge (4.5V)
VDS=15V , VGS=4.5V , ID=3A
---
5
---
nC
Qgs
Gate-Source Charge
---
1.54
---
Qgd
Gate-Drain Charge
---
1.84
---
Td(on)
Turn-On Delay Time
VDD=15V , VGS=10V , RG=3.3Ω
ID=1A
---
7.8
---
ns
Tr
Rise Time
---
2.1
---
Td(off)
Turn-Off Delay Time
---
29
---
Tf
Fall Time
---
2.1
---
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
452
---
pF
Coss
Output Capacitance
---
51
---
Crss
Reverse Transfer Capacitance
---
38
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current1,4
VG=VD=0V , Force Current
---
---
4.5
A
ISM
Pulsed Source Current2,4
---
---
14
A
VSD
Diode Forward Voltage2
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦300us , duty cycle ≦2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Diode Characteristics
N-CH 40V Fast Switching MOSFETs
FTK4008
2018. 09. 19
2/5
Revision No : 0



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