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TMS320F28027DAS Datasheet(PDF) 34 Page - Texas Instruments |
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TMS320F28027DAS Datasheet(HTML) 34 Page - Texas Instruments |
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34 / 135 page  8.14.6 Flash Parameters at 40-MHz SYSCLKOUT PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IDDP (1) VDD current consumption during Erase/Program cycle VREG disabled 60 mA IDDIOP (1) VDDIO current consumption during Erase/Program cycle 60 IDDIOP (1) VDDIO current consumption during Erase/Program cycle VREG enabled 100 mA (1) Typical parameters as seen at room temperature including function call overhead, with all peripherals off. It is important to maintain a stable power supply during the entire flash programming process. It is conceivable that device current consumption during flash programming could be higher than normal operating conditions. The power supply used should ensure VMIN on the supply rails at all times, as specified in the Recommended Operating Conditions of the data sheet. Any brown-out or interruption to power during erasing/programming could potentially corrupt the password locations and lock the device permanently. Powering a target board (during flash programming) through the USB port is not recommended, as the port may be unable to respond to the power demands placed during the programming process. 8.14.7 Flash Program/Erase Time PARAMETER TEST CONDITIONS MIN TYP MAX(2) UNIT Program Time(1) 8K Sector 250 2000 ms 4K Sector 125 2000 ms 16-Bit Word 50 μs Erase Time(3) 8K Sector 2 12 s 4K Sector 2 12 s (1) Program time is at the maximum device frequency. The programming time indicated in this table is applicable only when all the required code/data is available in the device RAM, ready for programming. Program time includes overhead of the flash state machine but does not include the time to transfer the following into RAM: • the code that uses flash API to program the flash • the Flash API itself • Flash data to be programmed (2) Maximum flash parameter mentioned are for the first 100 program and erase cycles. (3) The on-chip flash memory is in an erased state when the device is shipped from TI. As such, erasing the flash memory is not required prior to programming, when programming the device for the first time. However, the erase operation is needed on all subsequent programming operations. 8.14.8 Flash/OTP Access Timing PARAMETER MIN MAX UNIT ta(fp) Paged Flash access time 40 ns ta(fr) Random Flash access time 40 ns ta(OTP) OTP access time 60 ns 8.14.9 Flash Data Retention Duration PARAMETER TEST CONDITIONS MIN MAX UNIT tretention Data retention duration TJ = 55°C 15 years TMS320F28027, TMS320F28027-Q1, TMS320F28027F, TMS320F28027F-Q1, TMS320F28026 TMS320F28026-Q1, TMS320F28026F, TMS320F28026F-Q1, TMS320F28023 TMS320F28023-Q1, TMS320F28022, TMS320F28021, TMS320F28020, TMS320F280200 SPRS523P – NOVEMBER 2008 – REVISED FEBRUARY 2021 www.ti.com 34 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: TMS320F28027 TMS320F28027-Q1 TMS320F28027F TMS320F28027F-Q1 TMS320F28026 TMS320F28026-Q1 TMS320F28026F TMS320F28026F-Q1 TMS320F28023 TMS320F28023- Q1 TMS320F28022 TMS320F28021 TMS320F28020 TMS320F280200 |
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