LT8610AC datasheet(4/32 Pages) AD

4 / 32 page

LT8636/LT8637

Rev. C

For more information www.analog.com

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

Note 2: The LT8636E is guaranteed to meet performance specifications

from 0°C to 125°C junction temperature. Specifications over the –40°C

to 125°C operating junction temperature range are assured by design,

characterization, and correlation with statistical process controls. The

LT8636J and LT8636H are guaranteed over the full –40°C to 150°C

operating junction temperature range. High junction temperatures degrade

operating lifetimes. The LT8636MP is 100% tested and guaranteed over

the full –55°C to 150°C operating junction temperature range. Operating

lifetime is derated at junction temperatures greater than 125°C. The junction

temperature (TJ, in °C) is calculated from the ambient temperature (TA in

°C) and power dissipation (PD, in Watts) according to the formula:

TJ = TA + (PD • θJA)

where

θJA (in °C/W) is the package thermal impedance.

Note 3:

θ values determined per JEDEC 51-7, 51-12. See the Applications

Information section for information on improving the thermal resistance

and for actual temperature measurements of a demo board in typical

operating conditions.

Note 4: This IC includes overtemperature protection that is intended to

protect the device during overload conditions. Junction temperature will

exceed 150°C when overtemperature protection is active. Continuous

operation above the specified maximum operating junction temperature

will reduce lifetime.

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

Minimum On-Time

ILOAD = 1.5A, SYNC = 0V

ILOAD = 1.5A, SYNC = 2V

Minimum Off-Time

110

Oscillator Frequency

RT = 221k

RT = 60.4k

RT = 18.2k

180

665

1.8

210

700

1.95

240

735

2.1

kHz

MHz

Top Power NMOS On-Resistance

ISW = 1A

mΩ

Top Power NMOS Current Limit

7.5

12.5

Bottom Power NMOS On-Resistance

VINTVCC = 3.4V, ISW = 1A

mΩ

SW Leakage Current

VIN = 42V, VSW = 0V, 42V

–3

µA

EN/UV Pin Threshold

EN/UV Rising

0.94

1.0

1.06

EN/UV Pin Hysteresis

EN/UV Pin Current

VEN/UV = 2V

–20

PG Upper Threshold Offset from VFB

VFB Falling

7.5

10.25

PG Lower Threshold Offset from VFB

VFB Rising

–10.75

–8

–5.25

PG Hysteresis

0.2

PG Leakage

VPG = 3.3V

–80

PG Pull-Down Resistance

VPG = 0.1V

700

2000

SYNC/MODE Threshold

SYNC/MODE DC and Clock Low Level Voltage

SYNC/MODE Clock High Level Voltage

SYNC/MODE DC High Level Voltage

0.7

2.2

0.9

1.2

2.55

1.4

2.9

Spread Spectrum Modulation

Frequency Range

RT = 60.4k, VSYNC = 3.3V

Spread Spectrum Modulation Frequency

VSYNC = 3.3V

kHz

TR/SS Source Current

1.2

1.9

2.6

µA

TR/SS Pull-Down Resistance

Fault Condition, TR/SS = 0.1V

200

VIN to Disable Forced Continuous Mode

VIN Rising

ELECTRICAL CHARACTERISTICS The

denotes the specifications which apply over the full operating

temperature range, otherwise specifications are at TA = 25°C.

LT8610AC Datasheet(PDF) 4 Page - Analog Devices

LT8610AC Datasheet(HTML) 4 Page - Analog Devices

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32

Datasheet Download

Link URL