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PD7M441L Datasheet(PDF) 1 Page - Nihon Inter Electronics Corporation |
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PD7M441L Datasheet(HTML) 1 Page - Nihon Inter Electronics Corporation |
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1 / 4 page  MOSFET MODULE MODULE MODULE MODULE Dual 50A 450V/500V Dual 50A 450V/500V Dual 50A 450V/500V Dual 50A 450V/500V PD7M441L / PD7M440L PD7M441L / PD7M440L PD7M441L / PD7M440L PD7M441L / PD7M440L MAXMUM RATINGS Ratings Symbol PD7M441L PD7M440L Unit Drain-Source Voltage (VGS=0V) VDSS 450 500 V Gate -Source Voltage VGSS +/ - 20 V Duty=50% 50 (Tc=25 °C) Continuous Drain Current D.C. ID 35 (Tc=25 °C) A Pulsed Drain Current IDM 100 Tc=25 °C) A Total PowerDissipation PD 350 Tc=25 °C) W OperatingJunction Temperature Range Tjw -40 to +150 °C Storage Temperature Range Tstg -40 to +125 °C Isolation Voltage Terminals to Base AC, 1 min.) VISO 2000 V Module Base to Heatsink 3.0 MountingTorque Bus Bar to Main Terminals FTOR 2.0 N •m ELECTRICAL CHARACTERISTICS (@Tc=25°Cunlessotherwisenoted) Characteristic Symbol Test Condition Min. Typ. Max. Unit VDS=VDSS,VGS=0V - - 1.0 Zero Gate Voltage Drain Current IDSS Tj=125 °C,VDS=VDSS,VGS=0V - - 4.0 mA Gate-Source ThresholdVoltage VGS(th) VDS=VGS, ID=1mA 2.0 3.1 4.0 V Gate-Source Leakage Current IGSS VGS=+/- 20V,VDS=0V - - 1.0 µA StaticDrain-Source On-Resistance rDS(on) VGS=10V, ID=25A - 110 120 m-ohm Forward Transconductance gfs VDS=15V, ID=25A - 45 - S InputCapacitance Cies - 9.0 - nF OutputCapacitance Coss - 1.7 - nF Reverse TransferCapacitance Crss VDS=25V,VGS=0V,f=1MHz - 0.32 - nF Turn-On DelayTime td(on) - 120 - Rise Time tr - 80 - Turn-Off Delay Time td(off) - 240 - Fall Time tf VDD=1/2VDSS ID=25A VGS=-5V, +10V RG=7ohm - 50 - ns FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Continuous Source Current IS D.C. - - 35 A PulsedSource Current ISM - - - 100 A Diode ForwardVoltage VSD IS=50A - - 2.0 V Reverse RecoveryTime trr - 900 - ns Reverse Recovery Qr IS=50A, -dis/dt=100A/ µs - 25 - µC THERMAL CHARACTERISTICS Characteristic Symbol Test Condition Min. Typ. Max. Unit MOSFET - - 0.36 Thermal Resistance, Junction to Case Rth(j-c) Diode - - 0.36 Thermal Resistance, Case to Heatsink Rth(c-f) Mountingsurface flat, smooth, and greased - - 0.1 °C/W Dimension(mm) FEATURES * Dual MOSFETs Cascaded Circuit * LowOn-Resistance andSwitching Dissipation TYPICAL APPLICATIONS * PowerSupplyforthe Communications and the Induction Heating Approximate Weight:220g OUTLINE DRAWING Circuit 108.0 |
Similar Part No. - PD7M441L |
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Similar Description - PD7M441L |
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