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FTK4409 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTK4409 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 4 page ![]() 1 3 2 SOT– 323 2013. 06. 14 1/4 SEMICONDUCTOR TECHNICAL DATA FTK4409 Revision No : 0 Small Signal MOSFET 25 V, 0.75 A, Single, N−Channel, ESD Protection, SC−70/SOT−323 Features • Advance Planar Technology for Fast Switching, Low R DS(on) • Higher Efficiency Extending Battery Life • This is a Pb−Free Device Applications • Boost and Buck Converter • Load Switch • Battery Protection MAXIMUM RA TINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 25 V Gate−to−Source Voltage VGS 8.0 V Drain Current t < 5 s TA = 25°C ID 0.75 A Continuous Drain Current (Note 1) Steady State TA = 25°C ID 0.7 A TA = 75°C 0.6 Power Dissipation (Note 1) Steady State PD 0.28 W Power Dissipation (Note 1) t 5 s PD 0.33 W Pulsed Drain Current tp = 10 s IDM 3.0 A Operating Junction and Storage Temperature TJ, TSTG −55 to +150 °C Source Current (Body Diode) (Note 1) IS 0.3 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C ESD Rating − Machine Model 250 V THERMAL RESISTANCE RATINGS Rating Symbol Max Unit Junction−to−Ambient – Steady State (Note 1) R JA 450 °C/W Junction−to−Ambient − t 5 s (Note 1) R JA 375 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). (Top View) SOT-323 (3-Leads) Drain Gate 3 1 2 Source MARKING DIAGRAM T4 = Specific Device Code M = Month Code T4 1 3 2 PIN CONNECTIONS V(BR)DSS RDS(on) Typ ID Max 25 V 249 m @ 4.5 V 299 m @ 2.7 V 0.75 A Device Package Shipping FTK4409 SOT-323 (Pb−Free) 3000/Tape & Reel |
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