Electronic Components Datasheet Search
  English  ▼

X  

FTK4409 Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK4409
Description  Small Signal MOSFET 25 V, 0.75 A, Single, N?묬hannel, ESD Protection
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK4409 Datasheet(HTML) 2 Page - First Silicon Co., Ltd

  FTK4409 Datasheet HTML 1Page - First Silicon Co., Ltd FTK4409 Datasheet HTML 2Page - First Silicon Co., Ltd FTK4409 Datasheet HTML 3Page - First Silicon Co., Ltd FTK4409 Datasheet HTML 4Page - First Silicon Co., Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
2013. 06. 14
2/4
FTK4409
Revision No : 0
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 A
25
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
30
mV/°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 20 V
TJ = 25°C
0.5
A
TJ = 70°C
2.0
TJ = 125°C
5.0
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = 8.0 V
3
uA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 A
0.65
1.5
V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
−2.0
mV/°C
Drain−to−Source On Resistance
RDS(on)
VGS = 4.5 V, ID = 0.6 A
249
350
m
VGS = 2.7 V, ID = 0.2 A
299
400
VGS = 4.5 V, ID = 1.2 A
260
Forward Transconductance
gFS
VDS = 5.0 V, ID = 0.5 A
0.5
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
VGS = 0 V, f = 1.0 MHz,
VDS = 10 V
49
60
pF
Output Capacitance
COSS
22.4
30
Reverse Transfer Capacitance
CRSS
8.0
12
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 15 V,
ID = 0.8 A
1.2
1.5
nC
Threshold Gate Charge
QG(TH)
0.2
Gate−to−Source Charge
QGS
0.28
0.50
Gate−to−Drain Charge
QGD
0.3
0.40
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
td(ON)
VGS = 4.5 V, VDS = 15 V,
ID = 0.7 A, RG = 51
5.0
12
ns
Rise Time
tr
8.2
8.0
Turn−Off Delay Time
td(OFF)
23
35
Fall Time
tf
41
60
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 0.6 A
TJ = 25°C
0.82
1.20
V
2. Pulse Test: pulse width
300 s, duty cycle
2%.
3. Switching characteristics are independent of operating junction temperatures.



Html Pages

1 2 3 4


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com