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FTK7002V Datasheet(PDF) 2 Page - First Silicon Co., Ltd |
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FTK7002V Datasheet(HTML) 2 Page - First Silicon Co., Ltd |
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2 / 4 page ![]() 2016. 01. 25 2/4 FTK7002V Revision No : 0 Parameter Symbol Test c onditions M in Typ Max Unit Drain-Source Breakdown Voltag e V(BR)DSS VGS=0 V, ID=250 µA 60 Gate-Threshold Voltage Vth(GS) VDS=VGS, ID=250 µA 1 1.6 2.5 V Gate-body Leakage lGSS VDS=0 V, VGS=±20 V ±80 nA Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0 V 80 nA On-state Drain Current ID(ON) VGS=10 V, VDS=7 V 500 mA VGS=10 V, ID=500mA 0.9 5 Drain-Source On-Resistance rDS(0n) VGS=5 V, ID=50mA 1.1 7 Ω Forward Trans conductance gfs VDS=10 V, ID=200mA 80 mS VGS=10V, ID=500mA 3.75 V Drain-source on-voltage VDS(on) VGS=5V, ID=50mA 0.375 V Diode Forward Voltage VSD IS=115mA, VGS=0 V 0.55 1.2 V Input Capacitance Ciss 50 Output Capacitance COSS 25 Reverse Transfer Capacitance CrSS VDS=25V, VGS=0V, f=1MHz 5 pF SWITCHING TIME Turn-on Time td(on) 20 Turn-off Time td(off) VDD=25 V, RL=50Ω ID=500mA,VGEN=10 V RG=25 Ω 40 ns MOSFET ELECTRICAL CHARACTERISTICS a T =25 ℃ unless otherwise specified |
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