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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 02 — 26 January 2005

6 of 12

Philips Semiconductors

PH4530L

N-channel TrenchMOS™ logic level FET

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 7.

Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8.

Normalized drain-source on-state resistance

factor as a function of junction temperature.

003aaa527

0

10

20

30

40

0

0.5

1

1.5

2

(A)

2.4

2.2

2.5

2.6

2.7

2.8

3

5

10

003aaa528

0

10

20

30

40

012

34

(A)

°C

25

°C

003aaa529

0

5

10

15

20

0

1020

3040

(m

Ω)

10

5

2.9

3

2.6

2.7

2.8

03al00

0

0.6

1.2

1.8

-60

0

60

120

180

a

a

R

DSon

R

DSon 25 C

°

()

-----------------------------

=