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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 02 — 26 January 2005

7 of 12

Philips Semiconductors

PH4530L

N-channel TrenchMOS™ logic level FET

Fig 9.

Gate-source threshold voltage as a function of

junction temperature.

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

03aa33

0

0.5

1

1.5

2

2.5

-60

0

60

120

180

°C)

(V)

max

typ

min

03aa36

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

0123

(A)

max

typ

min

003aaa530

10

2

10

3

10

4

10

-1

1

10

10

2

C

(pF)