FTK4407

2015. 01. 15

1/4

SEMICONDUCTOR

TECHNICAL DATA

Revision No : 0

SOP-8

P-Channel Power MOSFET

DESCRIPTION

The FTK4407 combines advanced trench MOSFET technology

The device is ideal for load switch and battery protection applications

Battery protection applications

Load switch

Q4407= Device code

Solid dot=Pin1 indicator

Solid dot = Green molding compound device,

if none, the normal device

Front side

unless otherwise noted )

l

o

b

m

y

S

r

e

t

e

m

a

r

a

P

Limit

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

-12

A

Pulsed Drain Current

-48

A

Single Pulsed Avalanche Energy

(1)

115

mJ

Power Dissipation

1.4

W

Thermal Resistance from Junction to Ambient

89

℃/W

Junction Temperature

150

℃

Storage Temperature Range

-55 ~+150

℃

Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)

L

260

℃

1

2

3

4

5

6

7

S

G

D

D

D

D

S

S

8

APPLICATIONS

MARKING

YY=Date Code

T