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FTK4407 Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK4407
Description  P-Channel Power MOSFET
PDF  4 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK4407 Datasheet(HTML) 2 Page - First Silicon Co., Ltd

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Revision No : 0
FTK4407
2015. 01. 15
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Off characteristics
Drain-source breakdown voltage
V(BR) DSS
VGS = 0V, ID =-250µA
-30
V
Zero gate voltage drain current
IDSS
VDS =-30V, VGS=0V
-1
µA
Gate-body leakage current
IGSS
VDS =0V, VGS =±20V
±100
nA
On characteristics (note1)
Gate-threshold voltage
VGS(th)
VDS =VGS, ID =-250µA
-1.0
-2.2
V
VGS =-10V, ID =-12A
8.5
13
mΩ
Static drain-source on-sate resistance
DS(on)
VGS =-6V, ID =-10A
10
17
mΩ
Forward transconductance
g
FS
VDS =-5V, ID =-15A
25
S
Dynamic characteristics (note 2)
Input capacitance
Ciss
2900
Output capacitance
Coss
410
Reverse transfer capacitance
Crss
VDS =-15V,VGS=0V,
f =1MHz
280
pF
Switching characteristics (note 2)
Total gate charge
Qg
48
Gate-source charge
Qgs
12
Gate-drain charge
Qgd
VDS=-15V, VGS=-10V,
ID=-10A
14
nC
Turn-on delay time
td(on)
15
Turn-on rise time
tr
11
Turn-off delay time
td(off)
44
Turn-off fall time
tf
VDD=-15V,
VGS=-10V,RG=3Ω,
RL=1.25Ω
21
ns
Gate Resistance
Rg
f =1MHz, VDS=0V,
VGS=0V,
3.6
Ω
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note1)
SD
VGS =0V, IS=-2A
-1.2
V
Continuous drain-source diode forward
current
IS
-15
A
Pulsed drain-source diode forward current
SM
-60
A
Notes:
1.
Pulse Test : Pulse Width≤ 300µs, duty cycle≤2%.
2.
Guaranteed by design, not subject to production testing.
R
V
I



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