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DW01B Datasheet(PDF) 4 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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DW01B Datasheet(HTML) 4 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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4 / 13 page ![]() DW01B Rev.D Oct.-2015 DATA SHEET 4 / 13 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Battery short circuit protection delay time tSHORT Ta=25℃ 200 400 600 μs The charger voltage detection VCHG VDD=3.0V Ta=25℃ -0.27 -0.5 -0.86 V Between VM to VDD of the pull-up resistor RVMD VDD=1.8V,VM=0V Ta=25℃ 100 300 900 kΩ The pull-down resistor between VM to VSS RVMS Ta=25℃ 15 30 45 kΩ The COT output low pull-down resistor Ta=25℃ 4 MΩ CO output high level VDD=3.9V,Ta=25℃ ICO=10μA VDD-0.4 VDD-0.2 V DO output low level VDD=2.0V,Ta=25℃ IDO=10μA 0.2 0.4 V DO output high level VDD=3.9V,Ta=25℃ IDO=10μA VDD-0.4 VDD-0.2 V Power supply current IDD VDD =3.9V Ta=25℃ 2.0 6.0 μA A low power consumption mode the quiescent current IPDWN VDD=2.0V Ta=25℃ 0.7 1.0 μA 0V charging allowed voltage threshold (0V charging allowed type) V0V_CHG Ta=25℃ 1.2 V 0V charging prohibition threshold (0V charging prohibition model) V0V_INH VM=-2.0V Ta=25℃ 1.2 V 注:1.除非特别说明,所有电压值均相对于 VSS 而言; 2.参见应用电路图。 电性能参数 / Electrical Characteristics(Ta=25℃) Shenzhen H&M Semiconductor Co.Ltd http.//www.hmsemi.com |
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