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DW01B Datasheet(PDF) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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DW01B Datasheet(HTML) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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3 / 13 page  DW01B Rev.D Oct.-2015 DATA SHEET 3 / 13 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Power supply VDD -0.3 ～10 V VM pin Input voltage VM VDD-35 to VDD+0.3 V OC output pin voltage VCO VDD-35 to VDD+0.3 V OD output pin voltage VDO VDD-0.3 to VDD+0.3 V Power Dissipation PD 625 mW Operating Temperature Topr -40 to +85 ℃ Storage Temperature Tstg -65 to +150 ℃ Juction Temperature TJ 150 ℃ 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Power supply VDD － 40℃≤Ta≤85℃ 1.5 10 V Over voltage charging protection threshold (low to high) VOC Ta=25℃ VOCTYP-0.050 VOCTYP VOCTYP+0.050 V － 40℃≤Ta≤85℃ VOCTYP-0.080 VOCTYP VOCTYP+0.080 V Over voltage charging restore threshold (high to low) VOCR Ta=25℃ R1=100Ω（注 1） VOCRTYP-0.050 VOCRTYP VOCRTYP+0.050 V 40℃≤Ta≤85℃R1=100Ω （注 1） VOCRTYP-0.080 VOCRTYP VOCRTYP+0.080 V Over voltage charging protection delay time tOC VDD=3.6V→4.4V Ta=25℃ 0.7×tOCTYP tOCTYP 1.3×tOCTYP ms Over voltage discharge protection threshold （ high to low） VOD Ta=25℃ VODTYP-0.075 VODTYP VODTYP+0.075 V － 40℃≤Ta≤85℃ VODTYP-0.105 VODTYP VODTYP+0.105 V Over voltage discharge recovery threshold (low to high) VODR Ta=25℃ VODRTYP-0.075 VODRTYP VODRTYP+0.075 V － 40℃≤Ta≤85℃ VODRTYP-0.105 VODRTYP VODRTYP+0.105 V Over voltage discharge protection delay time tOD VDD=3.6V→2.4V Ta=25℃ 0.7×tODTYP tODTYP 1.3×tODTYP ms Over current discharge protection threshold VEDI Ta=25℃ VEDITYP-0.020 VEDITYP VEDITYP+0.020 V Over current discharge protection delay time tEDI Ta=25℃ 0.7×tEDITYP TEDITYP 1.3×tEDITYP ms Over current discharge recovery delay time tEDIR Ta=25℃ 1.20 1.80 2.40 ms Battery short circuit protection threshold VSHORT VM 端电压 Ta=25℃ 0.82 1.36 1.75 V 极限参数 / Absolute Maximum Ratings(Ta=25℃) 电性能参数 / Electrical Characteristics( Ta=25 & ℃ －40 ≤Ta≤85 ℃℃ ) Shenzhen H&M Semiconductor Co.Ltd http.//www.hmsemi.com |
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