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SS245 Datasheet(PDF) 4 Page - VBsemi Electronics Co.,Ltd

Part # SS245
Description  N-Channel 100-V (D-S) MOSFET
PDF  8 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

SS245 Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Charge
Source-Drain Diode Forward Voltage
Single Pulse Power, Junction-to-Ambient
0
5
10
15
20
0
204060
80
100
ID =20A
Qg - Total Gate Charge (nC)
VDS = 80 V
VDS =50 V
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD -Source-to-Drain Voltage (V)
1
0.01
0.001
0.1
10
100
TJ = 25 °C
TJ = 150 °C
0
60
120
180
240
300
Time (s)
10
1000
0.1
0.01
0.001
100
1
TA = 25 °C
On-Resistance vs. Junction Temperature
Threshold Voltage
Single Pulse Power, Junction-to-Case
0.5
1.0
1.5
2.0
2.5
- 50
- 25
0
25
50
75
100
125
150
175
TJ -Junction Temperature (°C)
ID =15A
VGS =10 V
- 2.3
- 1.8
- 1.3
- 0.8
- 0.3
0.2
0.7
- 50
- 25
0
25
50
75
100
125
150
175
ID = 250 µA
TJ - Temperature (°C)
ID =5mA
0
100
200
300
400
500
600
10
1
1
0
0
.
00.01
Time (s)
0.1
TC = 25 °C
SS245
4
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw



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