| Electronic Components Datasheet Search |
|
FTK8N65PD Datasheet(PDF) 6 Page - First Silicon Co., Ltd |
|
|
|||||||||||||||||||||||||||||
FTK8N65PD Datasheet(HTML) 6 Page - First Silicon Co., Ltd |
|
6 / 7 page ![]() Ω 2011. 08. 26 6/7 FTK8N65P / F / DD Revision No : 0 VDS, Drain-Source Voltage[V] VGS, Gate-Source Voltage[V] Figure 1.On-Region Characteristics Figure 2.Transfet Characteristics V GS Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V Bottom: 5.0V Notes 1.250us Pulse Test 2.T c=25! 100 101 10-1 150! 25! -55! Notes: 1.V DS=40V 2. 250us Pulse test 100 101 10-1 10-1 100 101 2 6 4 8 10 ID, Drain Current[A] V GS=10V V GS=20V Note:T J=25 Figure 3.On-Resistance Variation vs Drain Current and Gate Voltage 1.0 1.5 2.0 0.5 2.5 3.0 3.5 0 5 10 15 20 VSD, Source-Drain voltage[V] Notes: 1.V GS=0V 2. 250us Pulse Test 150! 25! Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 100 101 10-1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 C iss=Cgs+Cgd(Cgd=shorted) C oss=Cds+Cgd C rss=Cgd Notes: 1.V GS=0V 2. f=1MHZ VDS, Drain-Source Voltage [V] Figure 5.Capacitance Characteristics C iss C oss C rss 0 200 400 600 800 1000 1400 1600 1200 1800 2000 10-1 100 101 V DS=120V V DS=300V V DS=480V Note:I D=8A QG, Total Gate Charge[nC] Figure 6. Gate Charge Characteristics 2 10 4 6 8 12 0 0 5 30 10 15 20 25 ℃ |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |