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FTK8N65PD Datasheet(PDF) 7 Page - First Silicon Co., Ltd |
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FTK8N65PD Datasheet(HTML) 7 Page - First Silicon Co., Ltd |
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7 / 7 page ![]() 2011.08. 26 7/7 Revision No : 0 Figure 10. Maximum Drain Current vs. Case Temperature TC, Case Temperature [u ] Notes: 1.VGS=0V 2. ID=250uA TJ, JunctionTemperature [ ] Figure 7. Breakdown Voltage Variation vs Temperature Notes: 1.VGS=10V 2. ID=4A TJ, JunctionTemperature [u ] Figure 8. On-Resistance Variation vs Temperature 0.8 1.1 0.9 1.0 1.2 -100 -50 100 -50 0 50 150 200 -100 -50 100 0 50 150 200 0.0 1.5 0.5 1.0 2.5 2.0 3.0 75 50 100 125 150 100 10-1 10-2 Notes: 1. Z jc(t)=2.6! /W Max. 2. Duty Factor,D=t1/t2 3. TJM-TC=PDM*Z JC(t) PDM D=0.5 0.2 0.1 0.05 0.02 0.01 Figure 11. Transient Thermal Response Curve t1,Square Wave Pulse Duration[sec] Single pulse 10-5 10-4 10-3 10-2 10-1 100 101 Figure 9. Maximum Safe Operating Area VDS, Drain-Source VoltageWave[V] Operation in This Area Is Limited by RDS(on) 10us 100us 1ms 10ms 100ms DC Notes: 1. TC=25! 2. TJ=150! 3. Single Pulse 0 2 4 8 6 25 100 101 102 103 100 10-1 10-2 101 102 FTK8N65P / F / DD |
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