1.Gate

3.Source

2.Drain

TO-220

1

1

TO-220F

8.0 Amps, 650 Volts

N-CHANNEL MOSFET

DESCRIPTION

FEATURES

1.4Ω@V

* Low gate and reverse transfer Capacitance ( C: 12 pF typical )

* Fast switching capability

* Avalanche energy tested

* Improved dv/dt capability, high ruggedness

SYMBOL

ORDERING INFORMATION

Order Number

Pin Assignment

Package

1

2

3

Packing

FTK8N65P

TO-220

G

D

S

Tube

FTK8N65DD

TO-263

G

D

S

Tube

Note: Pin Assignment:

G: Gate

D: Drain

S: Source

2011. 08. 26

1/7

SEMICONDUCTOR

TECHNICAL DATA

FTK8N65P / F / DD

Revision No : 0

P :

F :

1

TO-263

DD :

FTK8N65F

TO-220F

G

D

S

Reel & Taping

These N-Channel enhancement mode power field effect

Transistors are produced using planar stripe, DMOS

technology.

This advanced technology has been especially tailored

to minimize on - state resistance , provide superior

switching performance,and Withstand high energy pulse

in the avalanche and commutaion mode .These devices

are well suited for high efficiency switch mode power

supply

electronic lamp ballasts

based on half bridge topology.