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STO65N60DM6 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STO65N60DM6
Description  N?멵hannel 600 V, 67 mΩ typ., 46 A MDmesh DM6 Power MOSFET in a TO?멛L package
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STO65N60DM6 Datasheet(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GADG040120211127SOA
10 2
10 1
10 0
10 -1
10 -2
10 -1
10 0
10 1
10 2
ID
(A)
VDS (V)
Operation
in
this
area
is
limited
by
max.
RDS(on)
Tj =150 °C
Tc = 25 °C
single pulse
tp = 10µs
tp = 10ms
tp = 1ms
tp = 100µs
tp = 1µs
Figure 2. Maximum transient thermal impedance
GADG150320211430ZTH
10 -1
10 -2
10 -3
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
tp (s)
0.4
duty=0.2
Single pulse
0.05
0.1
0.3
0.5
ZthJC
(°C/W)
ton
T
duty = ton / T
RthJC = 0.39 °C/W
Figure 3. Typical output characterisics
GIPD031020181119OCH
120
100
80
60
40
20
0
0
4
8
12
16
ID
(A)
VDS (V)
VGS =10V
VGS =9V
VGS =8V
VGS =7V
VGS =6V
Figure 4. Typical transfer characteristics
GIPD031020181119TCH
120
100
80
60
40
20
0
4
5
6
7
8
9
ID
(A)
VGS (V)
VDS = 20V
Figure 5. Typical gate charge characteristics
GADG220320211445QVG
600
500
400
300
200
100
0
12
10
8
6
4
2
0
0
10
20
30
40
50
60
70
VDS
(V)
Qg (nC)
Qgs
Qgd
Qg
VDD = 480 V, ID = 42 A
VGS
VDS
VGS
(V)
Figure 6. Typical drain-source on-resistance
GADG220320211447RON
73
71
69
67
65
63
61
0
6
12
18
24
30
36
42
RDS(on)
(mΩ)
ID (A)
VGS = 10 V
STO65N60DM6
Electrical characteristics (curves)
DS13572 - Rev 1
page 5/15



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