STO65N60DM6 datasheet(3/15 Pages) STMICROELECTRONICS

3 / 15 page

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off-states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

600

IDSS

Zero-gate voltage

drain current

VGS = 0 V, VDS= 600 V

µA

VGS = 0 V, VDS = 600 V,

TC = 125 °C (1)

100

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±5

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3.25

4.75

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 23 A

mΩ

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz, VGS = 0 V

2500

Coss

Output capacitance

125

Crss

Reverse transfer capacitance

Coss eq.(1)

Equivalent output capacitance

VDS = 0 to 480 V, VGS = 0 V

204

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

1.7

Total gate charge

VDD = 480 V, ID = 42 A, VGS = 0 to 10 V

(see Figure 14. Test circuit for gate

charge behavior)

65.2

Qgs

Gate-source charge

16.8

Qgd

Gate-drain charge

30.2

1. Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 19 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13. Switching times

test circuit for resistive load and

Figure 18. Switching time waveform)

Rise time

td(off)

Turn-off delay time

Fall time

STO65N60DM6

Electrical characteristics

DS13572 - Rev 1

page 3/15

STO65N60DM6 Datasheet(PDF) 3 Page - STMicroelectronics

STO65N60DM6 Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Datasheet Download

Link URL