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CMD217 Datasheet(PDF) 1 Page - Qorvo, Inc

Part # CMD217
Description  28-32 GHz GaN Power Amplifier
PDF  8 Pages
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Manufacturer  QORVO [Qorvo, Inc]
Direct Link  https://www.qorvo.com/
Logo QORVO - Qorvo, Inc

CMD217 Datasheet(HTML) 1 Page - Qorvo, Inc

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Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
The CMD217 is a 8.5 W GaN MMIC power
amplifier
die
ideally
suited
for
Ka-band
communications systems where high power and
high linearity are needed. The device delivers
greater than 20 dB of gain with a corresponding
output 1 dB compression point of +36.7 dBm
and a saturated output power of +39.3 dBm at
35% power added efficiency. The CMD217 is a
50 ohm matched design eliminating the need for
external DC blocks and RF port matching. The
CMD217 offers full passivation for increased
reliability and moisture protection.
► High Power
► High linearity
► Excellent efficiency
► Small die size
Electrical Performance - Vdd = 28 V, Vgg1 = Vgg2 = Vgg3 = -3.4 V, TA = 25
oC, F = 30 GHz
Features
Description
Functional Block Diagram
Parameter
Min
Typ
Max
Units
Frequency Range
GHz
Gain
20
dB
Output P1dB
36.7
dBm
Output Psat
39.3
dBm
Input Return Loss
13
dB
Output Return Loss
23
dB
Supply Current
580
mA
28 - 32
ver 1.7 0320
1
2
4
5
6
3
CMD217
28-32 GHz GaN Power Amplifier


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