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CMD217 Datasheet(PDF) 1 Page - Qorvo, Inc |
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CMD217 Datasheet(HTML) 1 Page - Qorvo, Inc |
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1 / 8 page ![]() Custom MMIC 300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294 Visit us online at www.custommmic.com The CMD217 is a 8.5 W GaN MMIC power amplifier die ideally suited for Ka-band communications systems where high power and high linearity are needed. The device delivers greater than 20 dB of gain with a corresponding output 1 dB compression point of +36.7 dBm and a saturated output power of +39.3 dBm at 35% power added efficiency. The CMD217 is a 50 ohm matched design eliminating the need for external DC blocks and RF port matching. The CMD217 offers full passivation for increased reliability and moisture protection. ► High Power ► High linearity ► Excellent efficiency ► Small die size Electrical Performance - Vdd = 28 V, Vgg1 = Vgg2 = Vgg3 = -3.4 V, TA = 25 oC, F = 30 GHz Features Description Functional Block Diagram Parameter Min Typ Max Units Frequency Range GHz Gain 20 dB Output P1dB 36.7 dBm Output Psat 39.3 dBm Input Return Loss 13 dB Output Return Loss 23 dB Supply Current 580 mA 28 - 32 ver 1.7 0320 1 2 4 5 6 3 CMD217 28-32 GHz GaN Power Amplifier |
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