Custom MMIC

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CMD217

28-32 GHz GaN Power Amplifier

Specifications

Absolute Maximum Ratings

Recommended Operating Conditions

Parameter

Rating

Drain Voltage, Vdd

32 V

RF Input Power

+30 dBm

Channel Temperature, Tch

175 ºC

Power Dissipation, Pdiss

25.4 W

Thermal Resistance,

Q

JC

3.55 ºC/W

Operating Temperature

-55 to 85 °C

Storage Temperature

-55 to 150 °C

Gate Voltage, Vgg1, 2, 3

-1.0 V

Electrical performance is measured at specific

test conditions. Electrical specifications are not

guaranteed over all recommended operating con-

ditions.

ver 1.7 0320

Parameter

Min

Typ

Max

Units

Vdd

20

28

30

V

Idd

580

mA

Vgg1, 2, 3

-3.4

Parameter

Min

Typ

Max

Units

Frequency Range

28 - 32

GHz

Gain

20

dB

Input Return Loss

13

dB

Output Return Loss

15

dB

Output P1dB

36.7

dBm

Psat

39

dBm

Output IP3

41.5

dBm

Power Added Efficiency

32

%

Supply Current

580

mA

Exceeding any one or combination of the maximum ratings

may cause permanent damage to the device.